Structural and optical properties of thermally annealed TiO2-SiO2 binary thin films synthesized by sol-gel method
Structural and optical properties of thermally annealed TiO2-SiO2 binary thin films synthesized by sol-gel method
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DOI：
10.1007/s10854-018-9688-6
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发表时间：
2018-09-01
影响因子：
2.8
通讯作者：
Abdulwahid, Rebar T.
中科院分区：
文献类型：
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作者：
Amin, Peshawa O.;Kadhim, Asmaa J.;Abdulwahid, Rebar T.
研究了热退火对玻璃基板上二氧化钛-二氧化硅二元薄膜结构和光学性能的影响。采用x射线衍射研究了不同温度（300、500、600）℃下沉积和退火膜的晶体结构。600℃退火膜的XRD谱图显示，在24.95℃时锐钛矿型TiO2结构生长。用光学显微镜对二元薄膜表面进行扫描，发现裂纹随着退火温度的升高而减小，退火温度可达600℃。利用椭偏光谱数据得到二元薄膜的厚度，发现从室温到600℃，薄膜的厚度随退火温度的升高而线性增加。用紫外可见分光光度计研究了薄膜的光学常数和带隙能（E-g）。被估计。结果表明，退火导致吸光度增加，透过率降低。这可以归结为随着温度的升高，薄膜的晶粒尺寸略有增加。随着退火温度的升高，二元薄膜的光学能隙有直接的和间接的减小，这是由于Ti和Si原子在混合薄膜中均匀而规则的分散以及Ti- o -Si键的形成。
Thermal annealing effects on structural and optical properties of TiO2-SiO2 binary thin films deposited on glass substrate were studied. X-ray diffraction was used to investigate the crystal structure of as-deposited and annealed films at different temperatures (300, 500, 600) A degrees C. The XRD pattern of annealed film at 600 A degrees C showed a growth of anatase TiO2 structure at 24.95. The surface of binary thin films were scanned by the optical microscope and revealed the crack reduction with increasing annealing temperature up to 600 A degrees C. The thickness of binary thin films were derived from spectroscopic ellipsometry data and it was found that the thickness increased linearly with increasing the annealing temperature from room temperature to 600 A degrees C. From the UV-Vis spectrophotometer the optical constants were studied and the optical band gap energies (E-g) were estimated. The results indicated that the annealing leads to an increase in the absorbance and decrease the transmittance. This can be ascribed to the slight increase in crystallite size of the films with increasing temperature. The optical energy gaps of binary thin films were direct and indirect, and both were decreased with increasing the annealing temperature which can be attributed to the homogeneous and regular dispersion of Ti and Si atoms in the mixed films and the formation of Ti-O-Si bond.