Coherent-to-incoherent transition in surfactant mediated growth of InAs quantum dots
Coherent-to-incoherent transition in surfactant mediated growth of InAs quantum dots
复制标题
表面活性剂介导的 InAs 量子点生长中的相干到非相干转变
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
A. G. Oliveira
中科院分区：
文献类型：
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作者：
B. Neves;M. Andrade;W. Rodrigues;G. Safar;M. Moreira;A. G. Oliveira
在这封信中，我们提出了一个原子力显微镜研究的一系列Te介导的InAs/GaAs样品与InAs覆盖范围从1.5到3单层。我们能够直接识别的生长模式的转变和松弛岛形成的机制。在相干生长模式的极限下，应变量子点聚集，形成孪生量子点（TQD），其是两个或更多个点虚拟键合在一起的结构，间隔小于3 nm。非相干模式的开始，然后明确的特征在于由最初形成小的，然后更大的，放松的岛屿的各个TQD的合并。
In this letter, we present an atomic force microscopy study of a series of Te-mediated InAs/GaAs samples with InAs coverage ranging from 1.5 to 3 monolayers. We were able to directly identify the growth mode transition and the mechanism of relaxed island formation. At the limit of coherent growth mode, strained quantum dots aggregate, forming twin quantum dots (TQDs), which are structures of two, or more, dots virtually bonded together, separated by less than 3 nm. The onset of the incoherent mode is then unambiguously characterized by the coalescence of individual TQDs forming initially small, and then larger, relaxed islands.