Studies of the Vaporization Mechanism of Gallium Arsenide Single Crystals
Studies of the Vaporization Mechanism of Gallium Arsenide Single Crystals
复制标题
砷化镓单晶汽化机理的研究
DOI：
10.1063/1.1676789
复制
发表时间：
1971
影响因子：
4.4
通讯作者：
G. Somorjai
中科院分区：
文献类型：
--
作者：
C. Y. Lou;G. Somorjai
在700-900℃温度范围内，用微天平和质谱学技术研究了砷化镓单晶在真空中蒸发的动力学。虽然砷化镓不一致地蒸发生成液态镓和砷蒸气分子，但在所研究的温度范围内可以获得初始的稳态蒸发速率。(111)晶面和(111)晶面的总蒸发速率和汽化活化能是相同的。砷化镓单晶的初始真空汽化速率比由平衡蒸汽压计算的最大汽化速率低约6倍，汽化活化能为ΔH*=90±3千卡/摩尔。当把过量的镓液体放在汽化表面的顶部时，速度增加了2倍，而活化能几乎保持不变。掺Te和掺锌的GaAs样品的蒸发速率都低于纯的镓Arsen样品.
The kinetics of vaporization of gallium arsenide single crystals into vacuum have been investigated using microbalance and mass spectrometric techniques in the temperature range 700–900° C. Although gallium arsenide vaporized incongruently to yield liquid gallium and arsenic vapor molecules, initial steady state evaporation rates can be obtained in the temperature range of study. The total evaporation rates and the activation energies of vaporization were found to be the same for both (111) and (1¯1¯1¯) faces. The initial vacuum vaporization rates of gallium arsenide single crystals are lower than the maximum rates calculated from equilibrium vapor pressures by about a factor of six and the activation energy of vaporization is Δ H*=90±3 kcal/mole. When excess gallium liquid was placed on top of the vaporizing surface, the rate increased by a factor of 2 while the activation energy remained virtually unchanged. Both Te‐doped and Zn‐doped GaAs samples have lower evaporation rates than the pure gallium arsen...