Heteroepitaxial growth and multiferroic properties of Mn-doped BiFeO 3 films on SrTiO 3 buffered III–V semiconductor GaAs
Heteroepitaxial growth and multiferroic properties of Mn-doped BiFeO 3 films on SrTiO 3 buffered III–V semiconductor GaAs
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DOI：
10.1063/1.4820579
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发表时间：
2013-09
影响因子：
3.2
通讯作者：
Guan-Yin GAO;Zhibin Yang;Wei Huang;H. Z. Zeng;Yong Wang;H. Chan;Wenbin Wu;J. Hao
中科院分区：
文献类型：
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作者：
Guan-Yin GAO;Zhibin Yang;Wei Huang;H. Z. Zeng;Yong Wang;H. Chan;Wenbin Wu;J. Hao
采用脉冲激光沉积法在GaAs（001）衬底上以SrTiO 3（STO）为缓冲层生长了Mn掺杂BiFeO 3（MBFO）薄膜。X射线衍射结果表明，薄膜为纯（00 l）取向，MBFO（100）//STO（100），而STO（100）//GaAs（110）。压电响应力显微镜图像和极化-电场曲线表明，生长在GaAs上的MBFO薄膜具有有效的铁电开关。MBFO薄膜具有良好的铁电性能（2 Pr ≥ 92 μC/cm ~ 2，2 EC ≥ 372 kV/cm）。在室温下，该异质结构具有饱和磁化强度为6.5emu/cm ~ 3，矫顽场约为123 Oe的铁磁特性。
Epitaxial Mn-doped BiFeO3 (MBFO) thin films were grown on GaAs (001) substrate with SrTiO3 (STO) buffer layer by pulsed laser deposition. X-ray diffraction results demonstrate that the films show pure (00l) orientation, and MBFO (100)//STO(100), whereas STO (100)//GaAs (110). Piezoresponse force microscopy images and polarization versus electric field loops indicate that the MBFO films grown on GaAs have an effective ferroelectric switching. The MBFO films exhibit good ferroelectric behavior (2Pr ∼ 92 μC/cm2 and 2EC ∼ 372 kV/cm). Ferromagnetic property with saturated magnetization of 6.5 emu/cm3 and coercive field of about 123 Oe is also found in the heterostructure at room temperature.