Linewidth enhancement factor in InGaAs quantum-dot amplifiers
Linewidth enhancement factor in InGaAs quantum-dot amplifiers
复制标题
InGaAs 量子点放大器中的线宽增强因子
DOI：
10.1109/jqe.2004.834779
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发表时间：
2003
影响因子：
2.5
通讯作者：
D. Bimberg
中科院分区：
文献类型：
--
作者：
S. Schneider;P. Borri;W. Langbein;U. Woggon;R. Sellin;D. Ouyang;D. Bimberg
本文报道了在50 K ~室温温度范围内，对电泵浦InGaAs量子点放大器的线宽增强因子（LEF）进行了系统的测量。在注入电流低于透明度，基态带间（激子）过渡的线宽增强因子的值是0.4和1之间，并随着载流子密度的增加而增加。此外，我们调查的光谱依赖性的LEF通过调谐我们的光学探针的波长从下面的共振与量子点的基态的共振与第一个光学活性的激发态跃迁。我们发现，在所有的研究温度下，随着光子能量的增加，LEF的减少。
We report systematic measurements of the linewidth enhancement factor (LEF) in an electrically pumped InGaAs quantum-dot (QD) amplifier in the temperature range from 50 K to room temperature. At injection currents below transparency, the value of the linewidth enhancement factor of the ground-state interband (excitonic) transition is between 0.4 and 1, and increases with increasing carrier density. Additionally, we investigate the spectral dependence of the LEF by tuning the wavelength of our optical probe from below resonance with the ground state of the QDs up to resonance with the first optically active excited-state transition. We find a decrease of the LEF with increasing photon energy at all investigated temperatures.