Dopant Loss Origins of Low Energy Implanted Arsenic and Antimony for Ultra Shallow Junction Formation
Dopant Loss Origins of Low Energy Implanted Arsenic and Antimony for Ultra Shallow Junction Formation
复制标题
用于超浅结形成的低能量注入砷和锑的掺杂剂损失起源
DOI：
10.1557/proc-532-23
复制
发表时间：
1998
期刊：
影响因子：
--
通讯作者：
S. Yokoyama
中科院分区：
文献类型：
--
作者：
K. Shibahara;H. Furumoto;K. Egusa;M. Koh;S. Yokoyama
我们研究了低能As或Sb注入形成的超浅结中片电阻增加的原因。这主要是由于在退火过程中掺杂剂在Si0 2 /Si界面堆积造成的掺杂剂损失所致。这个问题在As和Sb中很常见，并且随着注入能量的减小而变得更加明显。从Sb SIMS深度剖面的时间依赖性来看，叠堆可以分为两个阶段。在退火的早期，堆积速度非常快，这可能与注入形成的非晶层的固相外延生长导致掺杂剂的输运有关。在后期阶段，堆积速度要慢得多，被认为是由掺杂剂扩散控制的。
We have investigated the origins of sheet resistance increase in ultra shallow junctions formed by low energy As or Sb implantation. The increase is mainly attributed to dopant loss during annealing due to pileup of dopant at Si0 2 /Si interface. This problem is common to As and Sb and will become more significant as the implantation energies are decreased. We found that the pileup can be classified into two stages from the time dependence of Sb SIMS depth profile .In the early stage of annealing the pileup is very fast and is probably related to the transport of the dopants due to solid phase epitaxial growth of an amorphized layer formed by the implantation. In the later stage the pileup is much slower and is considered to be governed by dopant diffusion.