Magnetic energy levels of bismuth in the low-quantum-number limit
Magnetic energy levels of bismuth in the low-quantum-number limit
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DOI：
10.1103/physrevb.9.3257
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发表时间：
1974-04
影响因子：
3.7
通讯作者：
M. Vecchi;M. Dresselhaus
中科院分区：
文献类型：
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作者：
M. Vecchi;M. Dresselhaus
给出了铋在低量子数极限下的电子磁性能级的定量描述。该模型基于Maltz和Dresselhaus对Baraff哈密顿量的简化，考虑了双带模型外的带的影响，以及由耦合参数p表示的导价带中j= 0能级之间的相互作用，利用了低量子数极限下带间朗道能级和回旋共振跃迁的磁反射结果来确定该模型的参数。在4.2< T< 75 K温度范围内，H→∥二元和H→∥双三轴的直接能隙、回旋加速器有效质量和耦合参数P均有数值。
A quantitative description of the electronic magnetic levels of bismuth in the low-quantum-number limit is presented. The model is based on the simplifications to the Baraff Hamiltonian made by Maltz and Dresselhaus and includes the effects of bands outside the two-band model as well as the interaction between the j= 0 levels in the conduction and valence bands represented by a coupling parameter P. Magnetoreflection results on interband Landau-level and cyclotron-resonance transitions in the low-quantum-number limit are utilized in the determination of the parameters of this model, including the first quantitatitive measurement of P. Values for the direct energy gap, cyclotron effective masses, and coupling parameter P are reported for H→∥ binary and H→∥ bisectrix axes in the temperature range 4.2< T< 75 K.