Electrical activity of nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy
Electrical activity of nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy
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DOI：
10.1063/1.1592621
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发表时间：
2003-07
影响因子：
4
通讯作者：
J. Rommeluère;L. Švob;F. Jomard;J. Mimila-Arroyo;A. Lusson;V. Sallet;Y. Marfaing
中科院分区：
文献类型：
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作者：
J. Rommeluère;L. Švob;F. Jomard;J. Mimila-Arroyo;A. Lusson;V. Sallet;Y. Marfaing
氮作为 ZnO 受体的电活性已通过两种方式进行了研究。首先，在金属有机气相外延 (MOVPE) 过程中通过二烯丙胺引入氮，产生 1016–1021 cm−3 范围内的氮掺入。这导致自然供体的显着补偿，最小电子浓度为 5×1014 cm−3。其次，在高压条件下，由于 NH4NO3 的分解，在未掺杂的 MOVPE 层上进行氮扩散。以系统的方式观察到 p 型电导率的转换，测量的空穴浓度高达 6.5×1017 cm−3。
The electrical activity of nitrogen as an acceptor in ZnO has been investigated in two ways. First, nitrogen was introduced by means of diallylamine during metalorganic vapor phase epitaxy (MOVPE) yielding incorporation of nitrogen in the range 1016–1021 cm−3. This led to significant compensation of the natural donors with a minimum electron concentration of 5×1014 cm−3. Second, diffusion of nitrogen was carried out on undoped MOVPE layers under high pressure conditions stemming from the decomposition of NH4NO3. Conversion to p-type conductivity was observed in a systematic way with measured hole concentrations up to 6.5×1017 cm−3.