Physics-based minority charge and transit time modeling for bipolar transistors
Physics-based minority charge and transit time modeling for bipolar transistors
复制标题
基于物理的双极晶体管少数电荷和渡越时间建模
DOI：
10.1109/16.740893
复制
发表时间：
1999
影响因子：
3.1
通讯作者：
Tzung
中科院分区：
文献类型：
--
作者：
M. Schroter;Tzung
众所周知，SPICE Gummel-Poon模型（SGPM）中使用的渡越时间模型不足以可靠地设计工作在高电流密度（包括准饱和）或低电压下的电路，高电流密度（包括准饱和）通常是高速集成电路的情况，低电压对低功率应用很重要。此外，SGPM的渡越时间模型参数的提取通常非常困难且耗时。虽然在过去发表了各种各样的建议建模的渡越时间，他们中的大多数是不适合紧凑的晶体管模型所需的电路模拟从数值，参数提取和横向缩放的角度来看。在本文中，一组少数电荷和渡越时间方程推导出这是基于物理和横向缩放，以及适合纳入紧凑的模型。新模型的实验结果提出的渡越时间和渡越频率与偏置（I/子C/，V/子CE/），几何形状，和温度，表现出良好的协议不同类型的硅同质结双极晶体管。
It has been well known for many years that the transit time model used in the SPICE Gummel-Poon model (SGPM) is not adequate for reliable design of circuits operating either at high current densities (including quasi-saturation), which is often the case in high-speed integrated circuits, or at low voltages, which is important for low-power applications. In addition, extraction of the SGPM's transit time model parameters is often very difficult and time consuming. Although various proposals for modeling the transit time were published in the past, most of them are not suited for compact transistor models required in circuit simulation from a numerical, parameter extraction and lateral scaling point of view. In this paper, a set of minority charge and transit time equations is derived which are physics-based and laterally scaleable as well as suitable for incorporation into compact models. Experimental results of the new model are presented in terms of transit time and transit frequency versus bias (I/sub C/, V/sub CE/), geometry, and temperature, showing excellent agreement for different types of silicon homojunction bipolar transistors.