Boosted Dark Matter Interpretation of the XENON1T Excess
Boosted Dark Matter Interpretation of the XENON1T Excess
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XENON1T 过量的增强暗物质解释
DOI：
10.1103/physrevlett.125.161804
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发表时间：
2020
影响因子：
8.6
通讯作者：
Zhao Yue
中科院分区：
文献类型：
--
作者：
Fornal Bartosz;S;ick Pearl;Shu Jing;Su Meng;Zhao Yue
我们提出了增强的暗物质（BDM）作为一个可能的解释过量的keV电子反冲事件观察到的XENON1T。BDM粒子的速度比维里化暗物质的速度大得多，因此，BDM电子散射可以自然地产生keV电子反冲。我们表明，所需的BDM电子散射截面可以很容易地实现在一个简单的模型与重矢量介体。虽然这些横截面对于BDM来说太大而无法逃离太阳，但BDM通量可能来自银河系中心或晕暗物质湮灭。此外，每天调制的BDM信号将存在，这不仅可以用来区分它从各种背景，但也将提供重要的方向信息的BDM流量。
We propose boosted dark matter (BDM) as a possible explanation for the excess of keV electron recoil events observed by XENON1T. BDM particles have velocities much larger than those typical of virialized dark matter, and, as such, BDM-electron scattering can naturally produce keV electron recoils. We show that the required BDM-electron scattering cross sections can be easily realized in a simple model with a heavy vector mediator. Though these cross sections are too large for BDM to escape from the Sun, the BDM flux can originate from the Galactic Center or from halo dark matter annihilations. Furthermore, a daily modulation of the BDM signal will be present, which could not only be used to differentiate it from various backgrounds but would also provide important directional information for the BDM flux.