Vertical Confinement and Evolution of Reentrant Insulating Transition in the Fractional Quantum Hall Regime
Vertical Confinement and Evolution of Reentrant Insulating Transition in the Fractional Quantum Hall Regime
复制标题
分数量子霍尔体系中折返绝缘转变的垂直约束和演化
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
K. West
中科院分区：
文献类型：
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作者：
I. Yang;W. Kang;S. Hannahs;L. Pfeiffer;K. West
在狭窄的GaAs/AlGaAs量子阱中，我们观察到二维电子系统（2DES）的高场可重入绝缘相的异常移位。而不是众所周知的以$ensuremath{为中心的高场绝缘状态的转变
We have observed an anomalous shift of the high field reentrant insulating phases in a two-dimensional electron system (2DES) tightly confined within a narrow GaAs/AlGaAs quantum well. Instead of the well-known transitions into the high field insulating states centered around $ensuremath{
u}=1/5,$ the 2DES confined within an 80-AA{}-wide quantum well exhibits the transition at $ensuremath{
u}=1/3.$ Comparably large quantum lifetime of the 2DES in narrow well discounts the effect of disorder and points to confinement as the primary driving force behind the evolution of the reentrant transition.