Finite Element Analysis of Dependence of Programming Characteristics of Phase-Change Memory on Material Properties of Chalcogenides
Finite Element Analysis of Dependence of Programming Characteristics of Phase-Change Memory on Material Properties of Chalcogenides
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DOI：
10.1143/jjap.45.8600
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发表时间：
2006-11
影响因子：
1.5
通讯作者：
Y. Yin;H. Sone;S. Hosaka
中科院分区：
文献类型：
--
作者：
Y. Yin;H. Sone;S. Hosaka
本文用有限元法研究了电阻加热器接触硫族化物层的相变存储器（PCM）单元的编程特性。如在这项研究中分析的，该特性受到相变硫属化物材料的电阻率的显著影响。由于两种情况下硫属化物的电阻率差异，所制造的原始PCM需要比循环PCM的1.3 mA更高的1.6 mA的复位电流。更重要的是，为了更高的能量效率，必须采用具有比电阻加热器高得多的电阻率的硫属化物层，以显著地将复位电流降低到0.6mA或甚至更低，同时略微增加复位电压。
The programming characteristics of a phase-change memory (PCM) cell with a chalcogenide layer contacted by a resistive heater are investigated by finite element modelling. As analyzed in this study, the characteristics are markedly affected by the resistivity of the phase-change chalcogenide material. A higher reset current of 1.6 mA is required for the as-fabricated virgin PCM than that of 1.3 mA for the cycled PCM because of the resistivity difference of the chalcogenides in the two cases. More importantly, a chalcogenide layer with a much higher resistivity than the resistive heater is necessarily adopted for a higher energy efficiency to markedly reduce reset current to 0.6 mA or even lower while slightly increasing reset voltage.