Electron-phonon bound states in graphene in a perpendicular magnetic field.

Electron-phonon bound states in graphene in a perpendicular magnetic field.
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DOI:
10.1103/physrevlett.109.256602
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发表时间:
2012-06
影响因子:
8.6
通讯作者:
J. Zhu;S. M. Badalyan;F. Peeters
J. Zhu;S. M. Badalyan;F. Peeters
中科院分区:
物理与天体物理1区
文献类型:
--
作者:
J. Zhu;S. M. Badalyan;F. Peeters

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研究了垂直量子化磁场作用下单层石墨烯中电子-声子复合体的光谱。尽管电子-声子耦合很小,但通常的微扰理论不适用于计算光学声子发射阈值附近的散射幅度。除了微扰理论,我们的发现表明,声子发射阈值附近的真实光谱完全由新的分支控制,对应于一个电子和一个光学声子的束缚态,其结合能约为αω(0),其中α是电子-声子耦合,ω(0)是声子能量。
The spectrum of electron-phonon complexes in monolayer graphene is investigated in the presence of a perpendicular quantizing magnetic field. Despite the small electron-phonon coupling, usual perturbation theory is inapplicable for the calculation of the scattering amplitude near the threshold of optical phonon emission. Our findings, beyond perturbation theory, show that the true spectrum near the phonon-emission threshold is completely governed by new branches, corresponding to bound states of an electron and an optical phonon with a binding energy of the order of αω(0), where α is the electron-phonon coupling and ω(0) the phonon energy.