Anisotropy in thin film galfenol deposited on LiNbO3 as measured by MOKE
Anisotropy in thin film galfenol deposited on LiNbO3 as measured by MOKE
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DOI：
10.1016/j.jmmm.2021.167799
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发表时间：
2021-02
影响因子：
2.7
通讯作者：
Chris D. Clark;A. Huxley;David Czerski;P. Record
中科院分区：
文献类型：
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作者：
Chris D. Clark;A. Huxley;David Czerski;P. Record
我们报告了用磁光克尔效应（MOKE）测量的沉积在LiNbO 3 基底上的磁致伸缩合金galfenol 薄膜的磁各向异性。这种各向异性存在于 250 nm 厚的薄膜中，但在 600 nm 厚的薄膜中不存在，很可能表现出外延随厚度的损失。推导出各向异性常数 k u= 3.45 kJm− 3 。可以创建沿易轴、平行于基板 (1 1´ 00) 轴的磁条域（宽度 30 μm）并成像。
We report the magnetic anisotropy of films of the magnetostrictive alloy galfenol deposited on a LiNbO 3 substrate measured with the magneto-optic Kerr effect (MOKE). This anisotropy is present in 250 nm thick films but is absent in 600 nm thick films, most probably showing a loss in epitaxy with thickness. An anisotropy constant of k u= 3.45 kJm− 3 is deduced. Magnetic stripe domains (width 30 μm) oriented along the easy axis, parallel to the substrate (1 1¯ 00) axis, could be created and imaged.