Direct-write projection lithography of quantum dot micropillar single photon sources
Direct-write projection lithography of quantum dot micropillar single photon sources
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DOI：
10.1063/5.0155968
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发表时间：
2023-03
影响因子：
4
通讯作者：
P. Androvitsaneas;R. Clark;M. Jordan;Miguel Alvarez Perez;T. Peach;Stuart N. Thomas;Saleem Shabbir;A. Sobiesierski;A. Trapalis;I. Farrer;W. Langbein;A. Bennett
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作者：
P. Androvitsaneas;R. Clark;M. Jordan;Miguel Alvarez Perez;T. Peach;Stuart N. Thomas;Saleem Shabbir;A. Sobiesierski;A. Trapalis;I. Farrer;W. Langbein;A. Bennett
我们开发了一种利用直写光刻大规模生产量子点微柱腔的工艺。这项技术使我们能够实现高纵横比柱子的质量图案，其垂直、光滑的侧壁在直径小于2.0μm时保持高品质因数。将空腔封装在一层薄薄的氧化物(Ta2O5)中可防止大气中的氧化，并在数月的环境暴露中保持空腔的光学特性。我们证实，腔中的单点可以被确定地激发，从而产生具有干涉可见度(0.941±0.008)的高纯度、不可分辨的单光子。
We have developed a process to mass-produce quantum dot micropillar cavities using direct-write lithography. This technique allows us to achieve mass patterning of high-aspect ratio pillars with vertical, smooth sidewalls maintaining a high quality factor for diameters below 2.0 μm. Encapsulating the cavities in a thin layer of oxide (Ta2O5) prevents oxidation in the atmosphere, preserving the optical properties of the cavity over months of ambient exposure. We confirm that single dots in the cavities can be deterministically excited to create high-purity indistinguishable single photons with interference visibility (0.941 ± 0.008).