Cryogenic on-chip multiplexer for the study of quantum transport in 256 split-gate devices
Cryogenic on-chip multiplexer for the study of quantum transport in 256 split-gate devices
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DOI：
10.1063/1.4811376
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发表时间：
2013-06-17
影响因子：
4
通讯作者：
Smith, C. G.
中科院分区：
文献类型：
--
作者：
Al-Taie, H.;Smith, L. W.;Smith, C. G.
我们提出了一个多路复用方案，用于测量低温系统中的大量介观器件。多路复用器用于接触GaAs/AlGaAs异质结构上的256个分裂栅极的阵列，其中每个分裂栅极可以单独测量。分裂栅器件的低温电导受量子力学控制，导致电导平台的出现，间隔为2 e（2）/h。一个制造有限的产量达到94%的阵列，并定义了“量子产率”，占无序影响的量子行为的设备。在照射样品后，量子产率从55%上升到86%，这可以通过二维电子气的载流子密度和迁移率的相应增加来解释。该多路复用器是一种可扩展的结构，可以扩展到其他形式的介观器件。它克服了以前的限制，可以在一个芯片上制造的设备的数量，由于可用的电接触的数量，而不需要改变现有的实验设置。(C)2013 AIP Publishing LLC.
We present a multiplexing scheme for the measurement of large numbers of mesoscopic devices in cryogenic systems. The multiplexer is used to contact an array of 256 split gates on a GaAs/AlGaAs heterostructure, in which each split gate can be measured individually. The low-temperature conductance of split-gate devices is governed by quantum mechanics, leading to the appearance of conductance plateaux at intervals of 2e(2)/h. A fabrication-limited yield of 94% is achieved for the array, and a "quantum yield" is also defined, to account for disorder affecting the quantum behaviour of the devices. The quantum yield rose from 55% to 86% after illuminating the sample, explained by the corresponding increase in carrier density and mobility of the two-dimensional electron gas. The multiplexer is a scalable architecture, and can be extended to other forms of mesoscopic devices. It overcomes previous limits on the number of devices that can be fabricated on a single chip due to the number of electrical contacts available, without the need to alter existing experimental set ups. (C) 2013 AIP Publishing LLC.