Temperature dependence of the direct bandgap and transport properties of CdO
Temperature dependence of the direct bandgap and transport properties of CdO
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DOI：
10.1063/1.4775691
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发表时间：
2013-01
影响因子：
4
通讯作者：
S. V. Farahani;V. Muñoz-Sanjosé;J. Zúñiga-Pérez;C. McConville;T. Veal
中科院分区：
文献类型：
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作者：
S. V. Farahani;V. Muñoz-Sanjosé;J. Zúñiga-Pérez;C. McConville;T. Veal
对在蓝宝石衬底上用金属有机物气相外延生长的CdO薄膜进行了生长态和生长后退火处理，并测量了薄膜的温度依赖性光吸收、霍尔效应和红外反射率。的吸收边和传导电子等离子体激元能量随温度的演变进行了建模，包括所产生的影响，从Burstein-Moss位移和带隙重整化。零温直接带隙和带边有效质量分别为2.31 ± 0.02eV和0.27 ± 0.01m（0）。带隙的温度依赖性的相关Varshni参数被发现是α = 8 × 10（-4）eV/K和β = 260 K。
Temperature-dependent optical absorption, Hall effect, and infrared reflectance measurements have been performed on as-grown and post-growth annealed CdO films grown by metal organic vapor phase epitaxy on sapphire substrates. The evolution of the absorption edge and conduction electron plasmon energy with temperature has been modeled, including the effects arising from the Burstein-Moss shift and bandgap renormalization. The zero-temperature fundamental direct bandgap and band edge effective mass have been determined to be 2.31+/-0.02 eV and 0.27+/-0.01m(0), respectively. The associated Varshni parameters for the temperature dependence of the bandgap are found to be a alpha = 8 x 10(-4) eV/K and beta = 260 K.