Modeling, Simulation, Fabrication, and Characterization of a 10- $mu$ W/cm2 Class Si-Nanowire Thermoelectric Generator for IoT Applications
Modeling, Simulation, Fabrication, and Characterization of a 10- $mu$ W/cm2 Class Si-Nanowire Thermoelectric Generator for IoT Applications
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用于物联网应用的 10- $mu$ W/cm2 级硅纳米线热电发电机的建模、仿真、制造和表征
DOI：
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发表时间：
2018
影响因子：
3.1
通讯作者：
Takanobu Watanabe
中科院分区：
文献类型：
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作者：
M. Tomita;S. Oba;Y. Himeda;R. Yamato;K. Shima;T. Kumada;Mao Xu;H. Takezawa;K. Mesaki;K. Tsuda;S. Hashimoto;T. Zhan;Hui Zhang;Y. Kamakura;Yuhhei Suzuki;H. Inokawa;H. Ikeda;T. Matsukawa;T. Matsuki;Takanobu Watanabe
我们提出了一个平面器件架构兼容的CMOS工艺技术作为硅纳米线（NW）热电（TE）发电机的最佳电流基准。所提出的设备是由一个温度梯度，形成在一个垂直的热流到基板附近。因此，与传统的TE发生器不同，平面短Si-NW不需要悬挂在腔结构上。在5 K的外部施加温差下，观察到记录的TE功率密度为12 μ m ext{W}$ /cm 2，通过缩短Si-NW长度和抑制Si衬底的寄生热阻。该演示为开发利用环境和体温的具有成本效益的自主物联网应用铺平了道路。
We propose a planar device architecture compatible with the CMOS process technology as the optimal current benchmark of a Si-nanowire (NW) thermoelectric (TE) power generator. The proposed device is driven by a temperature gradient that is formed in the proximity of a perpendicular heat flow to the substrate. Therefore, unlike the conventional TE generators, the planar short Si-NWs need not be suspended on a cavity structure. Under an externally applied temperature difference of 5 K, the recorded TE power density is observed to be $12~mu ext{W}$ /cm2 by shortening the Si-NWs length and suppressing the parasitic thermal resistance of the Si substrate. The demonstration paves a pathway to develop cost-effective autonomous internet-of-things applications that utilize the environmental and body heats.