Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays
Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays
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DOI：
10.1038/nmat3256
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发表时间：
2012-04-01
期刊：
影响因子：
41.2
通讯作者：
Kim, Kinam
中科院分区：
文献类型：
--
作者：
Jeon, Sanghun;Ahn, Seung-Eon;Kim, Kinam
非晶氧化物半导体以其光学透明度而闻名（1-4），其组成可以定制，以增强其吸收并诱导绿光和短波长的光照射的光导电性。原则上，非晶氧化物半导体薄膜光电导体可以应用于光传感器。然而，在去除光照后，它们的光导率会持续数小时（5,6），这严重降低了基于氧化物的传感器阵列的响应时间和帧速率。我们通过开发一种门控非晶氧化物半导体光薄膜晶体管（photo- tft）解决了持续光电导率（PPC）的问题，该晶体管可以直接控制费米能级在有源层中的位置。对这些器件施加短时间（10ns）电压脉冲可诱导电子积累，并加速其与离子化氧空位位点的重组，这被认为是导致PPC的原因。我们将这些光电tft集成到一个透明的有源矩阵光敏传感器阵列中，该阵列可以在高帧速率下工作，并且在非接触式交互显示中具有潜在的应用。
The composition of amorphous oxide semiconductors, which are well known for their optical transparency(1-4), can be tailored to enhance their absorption and induce photoconductivity for irradiation with green, and shorter wavelength light. In principle, amorphous oxide semiconductor-based thin-film photoconductors could hence be applied as photosensors. However, their photoconductivity persists for hours after illumination has been removed(5,6), which severely degrades the response time and the frame rate of oxide-based sensor arrays. We have solved the problem of persistent photoconductivity (PPC) by developing a gated amorphous oxide semiconductor photo thin-film transistor (photo-TFT) that can provide direct control over the position of the Fermi level in the active layer. Applying a short-duration (10 ns) voltage pulse to these devices induces electron accumulation and accelerates their recombination with ionized oxygen vacancy sites, which are thought to cause PPC. We have integrated these photo-TFTs in a transparent active-matrix photosensor array that can be operated at high frame rates and that has potential applications in contact-free interactive displays.