Activation energy of negative fixed charges in thermal ALD Al2O3
Activation energy of negative fixed charges in thermal ALD Al2O3
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DOI：
10.1063/1.4960097
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发表时间：
2016-08-08
影响因子：
4
通讯作者：
Hofmann, M.
中科院分区：
文献类型：
--
作者：
Kuehnhold-Pospischil, S.;Saint-Cast, P.;Hofmann, M.
本文研究了热原子层沉积非晶Al_2O_3层与Si界面的热激活负固定电荷Q(TOT)和界面陷阱密度D-It。Q(TOT)和D-It的热激活是在2 2 0~5 0 0℃的温度下进行的，持续时间为3 S至38 h，用半导体电晕氧化物表征方法测量了Q(TOT)和D-It的温差。用拉伸指数函数对它们的时间依赖性进行了拟合，得到Q(Tot)和D-it的激活能分别为E-A=(2.2+/-0.2)eV和E-A=(2.3+/-0.7)eV。在350℃到500℃的温度范围内，p型和n型掺杂Si样品的Q(Tot)和D-it的变化相似。相反，在220摄氏度时，p型样品的充电过程得到了加强。在此基础上，提出了一个基于硅和氧化铝之间通过缺陷的电子跳跃过程而导致Q(TOT)的电荷模型。由AIP出版公司出版。
A study of the thermally activated negative fixed charges Q(tot) and the interface trap densities D-it at the interface between Si and thermal atomic-layer-deposited amorphous Al2O3 layers is presented. The thermal activation of Q(tot) and D-it was conducted at annealing temperatures between 220 degrees C and 500 degrees C for durations between 3 s and 38 h. The temperature-induced differences in Q(tot) and D-it were measured using the characterization method called corona oxide characterization of semiconductors. Their time dependency were fitted using stretched exponential functions, yielding activation energies of E-A = (2.2 +/- 0.2) eV and E-A = (2.3 +/- 0.7) eV for Q(tot) and D-it, respectively. For annealing temperatures from 350 degrees C to 500 degrees C, the changes in Q(tot) and D-it were similar for both p-and n-type doped Si samples. In contrast, at 220 degrees C the charging process was enhanced for p-type samples. Based on the observations described in this contribution, a charging model leading to Q(tot) based on an electron hopping process between the silicon and Al2O3 through defects is proposed. Published by AIP Publishing.