Electrostatically transparent graphene quantum-dot trap layers for efficient nonvolatile memory
Electrostatically transparent graphene quantum-dot trap layers for efficient nonvolatile memory
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DOI：
10.1063/1.4914306
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发表时间：
2015-03-09
影响因子：
4
通讯作者：
Yu, Woo Jong
中科院分区：
文献类型：
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作者：
Kim, Young Rae;Jo, Yong Eun;Yu, Woo Jong
在这项研究中，我们已经证明了非易失性存储设备使用石墨烯量子点（GQD）陷阱层与氧化铟锌（IZO）半导体沟道。由于单层石墨烯有限的态密度和弱的静电屏蔽，GQD的费米能级被狄拉克点附近的隧穿电子有效地调制。结果表明，在IZO沟道中实现了大的栅调制，亚阈值摆幅为5.21 V/dec（300 nm SiO2栅绝缘层），而Au量子点存储器由于金属量子点中强的静电屏蔽而显示出15.52 V/dec。GQD的分立电荷陷阱共同实现了在超过800次编程和擦除循环的耐久性测试中的稳定性能。我们的研究表明，GQD陷阱层被用于非易失性存储器件中的一个非常有前途的材料的令人兴奋的潜力。(C)2015 AIP Publishing LLC.
In this study, we have demonstrated nonvolatile memory devices using graphene quantum-dots (GQDs) trap layers with indium zinc oxide (IZO) semiconductor channel. The Fermi-level of GQD was effectively modulated by tunneling electrons near the Dirac point because of limited density of states and weak electrostatic screening in monolayer graphene. As a result, large gate modulation was driven in IZO channel to achieve a subthreshold swing of 5.21 V/dec (300 nm SiO2 gate insulator), while Au quantum-dots memory shows 15.52 V/dec because of strong electrostatic screening in metal quantum-dots. Together, discrete charge traps of GQDs enable stable performance in the endurance test beyond 800 cycles of programming and erasing. Our study suggests the exciting potential of GQD trap layers to be used for a highly promising material in non-volatile memory devices. (C) 2015 AIP Publishing LLC.