Time-Resolved Thermoreflectance Imaging for Thermal Testing and Analysis
Time-Resolved Thermoreflectance Imaging for Thermal Testing and Analysis
复制标题
用于热测试和分析的时间分辨热反射成像
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
K. Yazawa
中科院分区：
文献类型：
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作者：
K. Yazawa
高速、时间分辨、热反射成像是一种定位微电子器件缺陷或潜在故障区域的新方法。本文报道了热反射技术在电路温度分布动态成像中的应用。这种瞬态成像方法是基于一种精确的电子锁定技术，其图像处理类似于老式动画电影。顺序快门速度相机与脉冲照明LED一起使用，用于对温度分布进行采样。本文介绍了该方法，并对系统硬件进行了描述。本文将对基于红外发射成像的锁相热成像技术进行理论比较。热反射率的局限性以及空间和时间分辨率的驱动因素将被讨论。最后，我们强调并提供了近红外（NIR）波长成像的例子，以实现在同一系统中实现透硅热成像和发射成像。这两种技术的结合有望使热点温度和任何异常发射位点相互关联，有望使人们更好地了解缺陷的性质。
High speed, time-resolved, thermoreflectance imaging is a novel way to locate defects or regions of potential failures in microelectronic devices. This paper reports on our thermoreflectance technique for dynamic imaging of circuit temperature distributions. This transient imaging method is based on a precise electrical lock-in technique with image processing similar to an old fashioned animation movie. An ordinal shutter speed camera is used in conjunction with an illumination LED that is pulsed for sampling the temperature distribution. This paper presents the method and gives a description of the system hardware. A theoretical comparison to lock-in thermography, which is based on infrared emission imaging, will be given. Limitations of thermoreflectance and the driving factors for spatial and time resolution will be discussed. Finally, we highlight and provide examples of near infrared (NIR) wavelength imaging, to enable both throughsilicon thermal imaging and emission imaging in the same system. The combination of these two techniques is expected to enable hotspot temperatures and any anomalous emission sites to be correlated, hopefully leading to a better understanding of the nature of the defect.