Thermoelectric properties and nonstoichiometry of GaGeTe
Thermoelectric properties and nonstoichiometry of GaGeTe
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DOI：
10.1016/j.jssc.2012.03.030
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发表时间：
2012-06
影响因子：
3.3
通讯作者：
Č. Drašar;V. Kucek;L. Beneš;P. Lošťák;M. Vlcek
中科院分区：
文献类型：
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作者：
Č. Drašar;V. Kucek;L. Beneš;P. Lošťák;M. Vlcek
使用固相反应从纯度为 5N 的元素合成成分为 Ga1+xGe1−xTe (x=−0.03÷0.07) 和 GaGeTe1−y(y=−0.02−0.02) 的多晶样品。合成产物经X射线衍射鉴定；通过 EDX/SEM 检查相纯度和微观结构。使用热压制备用于测量传输性能的样品。通过测量 80-480K 温度范围内的电导率、霍尔系数和塞贝克系数以及 300-580K 温度范围内的热导率来表征它们。所有样品均显示 p 型导电性。我们讨论了化学计量对样品的相纯度和自由载流子浓度的影响。热电性能的研究表明，与室温下最先进的材料相比，这些样品的功率因数较低，但随着温度的升高而明显增加。
Polycrystalline samples of composition Ga1+xGe1−xTe (x=−0.03÷0.07) and GaGeTe1−y(y=−0.02÷0.02) were synthesized from elements of 5N purity using a solid state reaction. The products of synthesis were identified by X-ray diffraction; phase purity and microstructure were examined by EDX/SEM. Samples for measurement of transport properties were prepared using hot-pressing. They were characterized by measurement of electrical conductivity, the Hall coefficient, and the Seebeck coefficient over a temperature range 80–480K and of thermal conductivity over a temperature range 300–580K. All samples show p-type conductivity. We discuss the influence of stoichiometry on the phase purity of the samples and on free carrier concentration. The investigation of thermoelectric properties shows that the power factor of these samples is low compared to state-of-the-art materials at room temperature but increases distinctly with temperature.