Enhancement of critical current densities by the longitudinal magnetic field effect in multilayered SmBa2Cu3Oy films controlling the film thickness
Enhancement of critical current densities by the longitudinal magnetic field effect in multilayered SmBa2Cu3Oy films controlling the film thickness
复制标题
通过控制薄膜厚度的多层 SmBa2Cu3Oy 薄膜中的纵向磁场效应提高临界电流密度
DOI：
10.1088/0953-2048/28/10/104004
复制
发表时间：
2015
期刊：
影响因子：
--
通讯作者：
Y. Yoshida
中科院分区：
文献类型：
--
作者：
K. Sugihara;Y. Ichino;Y. Yoshida
本文报道了在无力状态下，具有短纳米棒的SmBCO （SmBCO）多层膜的膜厚和临界电流密度（J c）与界面密度的关系。在研究jc对膜厚的依赖性时，我们固定了层厚，改变了总膜厚。然而，在研究界面密度对J c的依赖性时，我们固定了膜的总厚度，改变了每层的厚度。在膜厚大于400 nm、界面密度大于80层/μm的多层膜上，利用纵向磁场效应观察了J c峰。我们认为需要两种类型的磁链固定来增强J c，这两种类型是针对ab平面上的无力扭矩和沿c轴的洛伦兹力。
We report on the film thickness and the interface density dependence of critical current density (J c) in multilayered SmBa 2 Cu 3 O y (SmBCO) films with short BaHfO 3 (BHO) nanorods under the force-free state. In the investigation into the film thickness dependence of J c, we fixed the layer thickness and changed the total film thickness. However, in the investigation into the interface density dependence of J c, we fixed the total film thickness and changed each layer's thickness. We observed the J c peaks via the longitudinal magnetic field effect on multilayered films which have a certain film thickness of over 400 nm and a certain interface density of over 80 layers/μm. We considered that two types of flux pinning were needed for the J c enhancement and these were against the force-free torque in the ab plane and the Lorentz force along the c-axis.