Enhanced dielectric properties of nitrogen doped epitaxial Gd2O3 thin films on Si
Enhanced dielectric properties of nitrogen doped epitaxial Gd2O3 thin films on Si
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DOI：
10.1002/pssc.201300596
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发表时间：
2014-09
期刊：
影响因子：
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通讯作者：
Ayan Roy Chaudhuri;A. Fissel;H. Osten
中科院分区：
文献类型：
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作者：
Ayan Roy Chaudhuri;A. Fissel;H. Osten
研究了氮掺杂对Si（111）衬底上外延生长的Gd 2 O3薄膜的能带结构和电学性质的影响。采用固体源分子束外延技术，以N_2O为氮化剂，在p型Si（111）衬底上生长了Gd_2O_3：N外延层。二次离子质谱和X-射线光电子能谱测量证实了取代氮纳入介电层。的Gd 2 O3：N层的漏电流密度和电容-电压滞后消失的显着降低表明，在Gd 2 O3中的氮掺杂成功地消除了氧空位引起的氧化层中的缺陷的不利影响。（© 2014 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
The impact of nitrogen doping on the growth electronic band structure and electrical properties of epitaxial Gd2O3 thin films on Si (111) has been investigated. Epitaxial layers of Gd2O3:N were grown on p-type Si (111) substrates by solid source molecular beam epitaxy technique using molecular N2O as the nitridation agent. Substitutional nitrogen incorporation into the dielectric layer was confirmed by secondary ion mass spectroscopy and X-ray photoelectron spectroscopy measurements. Significant reduction of the leakage current density and disappearance of capacitance-voltage hysteresis in the Gd2O3:N layers indicate that nitrogen doping in Gd2O3 successfully eliminates the adverse effects of the oxygen vacancy induced defects in the oxide layer. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)