Effect of plastic deformation on electronic properties of GaAs
Effect of plastic deformation on electronic properties of GaAs
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塑性变形对GaAs电子性能的影响
DOI：
10.1063/1.339218
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发表时间：
1987
影响因子：
3.2
通讯作者：
H. Gatos
中科院分区：
文献类型：
--
作者：
M. Skowronski;J. Lagowski;M. Milshtein;C. Kang;F. P. Dabkowski;A. M. Hennel;H. Gatos
采用深能级光谱、光吸收和电子输运测量对塑性变形（压缩）的GaAs进行了系统的研究。形变引起的自由载流子浓度、迁移率和深能级占据的变化与深受主缺陷有关。在变形样品中的光吸收的变化被发现是由于局部应力场的位错，而不是通过本地化的水平过渡。没有发现任何有意义的增加（>2×1015 cm−3）的EL2或其他中间带隙施主的浓度的证据，变形高达约3%。因此，很明显，变形半绝缘GaAs中砷反位AsGa的电子顺磁共振信号的增强必须是由于AsGa的电离增加，而不是新的反位缺陷的产生。
A systematic study of plastically deformed (in compression) GaAs was carried out employing deep‐level spectroscopies, optical absorption, and electronic transport measurements. Deformation‐induced changes in the free‐carrier concentration, the mobility, and occupation of deep levels were associated with a deep acceptor defect. Changes of the optical absorption in deformed samples were found to be due to a localized stress field of dislocations rather than transitions via localized levels. No evidence was found of any meaningful increase (>2×1015 cm−3) of the concentration of EL2 or other midgap donors for deformation up to about 3%. Thus, it is evident that the enhancement of the electron paramagnetic resonance signal of the arsenic antisite AsGa in deformed semi‐insulating GaAs must be due to the increased ionization of AsGa rather than the generation of new antisite defects.