Vacancy Phonon Scattering and Thermoelectric Properties in In2Te3–SnTe Compounds
Vacancy Phonon Scattering and Thermoelectric Properties in In2Te3–SnTe Compounds
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DOI：
10.4028/www.scientific.net/msf.650.126
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发表时间：
2010-05
期刊：
影响因子：
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通讯作者：
H. Fu;P. Ying;J. Cui;Y. Yan;X.J. Zhang
中科院分区：
文献类型：
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作者：
H. Fu;P. Ying;J. Cui;Y. Yan;X.J. Zhang
固溶体形成是降低热电材料晶格热导率的一种常见而有效的方法，因为点缺陷和晶界会产生额外的声子散射。本文采用温和凝固法制备了In_2Te_3-SnTe化合物，并对其在318 ~ 705 K温度范围内的热电性能进行了研究。测量结果表明，输运性质是强烈依赖于化学成分的In 2 Te 3含量，晶格热导率显着降低以上的最低In 2 Te 3浓度，这可能可以解释由铟子晶格和周期性空位平面上的空位的引入。在705 K时，热电优值ZT最高可达0.19，如果对In_2Te_3基合金的化学成分和结构进行适当的优化，有望使其热电优值有较大的提高。
Solid solution formation is a common and effective way to reduce the lattice thermal conductivity for thermoelectric materials because of additional phonon scattering by point defects and grain boundaries. In the present work we prepared In2Te3–SnTe compounds using a mild solidification technique and evaluated their thermoelectric properties in the temperature range from 318705 K. Measurements reveal that the transport properties are strongly dependent on the chemical composition In2Te3 content, and lattice thermal conductivity significantly reduces above a minimum In2Te3 concentration, which can possibly be explained by an introduction of the vacancy on the indium sublattice and periodical vacancy planes. The highest thermoelectric figure of merit ZT of 0.19 can be achieved at 705 K, and a big improvement of In2Te3 based alloys would be expected if a proper optimization to the chemical compositions and structures were made.