Trap creation in ultrathin SiO2 films due to electron injection studied by scanning tunneling microscopy/scanning tunneling spectroscopy
Trap creation in ultrathin SiO2 films due to electron injection studied by scanning tunneling microscopy/scanning tunneling spectroscopy
复制标题
通过扫描隧道显微镜/扫描隧道光谱研究电子注入导致超薄 SiO2 薄膜中陷阱的产生
DOI：
10.1016/s0169-4332(00)00222-1
复制
发表时间：
2000
影响因子：
6.7
通讯作者：
Y. Yasuda
中科院分区：
文献类型：
--
作者：
K. Ohmori;S. Zaima;Y. Yasuda
利用扫描隧道显微镜（STM）和扫描隧道光谱（STS）在原子尺度上研究了SiO_2薄膜中陷阱的产生。在STM图像中观察到由使用STM尖端的电子注入产生的亮点。亮点的密度取决于注入电压和温度。通过比较电子注入SiO_2薄膜和新鲜SiO_2薄膜的STS谱，发现这些亮斑与SiO_2薄膜中的正电荷陷阱有关，并引起了Si/SiO_2界面附近的能带弯曲。
Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) have been employed for the investigation of trap creation in ultrathin SiO2films on an atomic scale. Bright spots created by electron injection using STM tips were observed in STM images. The density of bright spots depends on the injection voltage and temperature. Comparing STS spectra obtained from electron-injected SiO2films with those from a fresh film, we have found that the bright spots are related to positively charged traps in the SiO2films and caused a band bending near the Si/SiO2interface.