Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition
Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition
复制标题
通过化学气相沉积生长高迁移率 3C-SiC 外延层
DOI：
10.1143/jjap.27.l434
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发表时间：
1988
影响因子：
1.5
通讯作者：
S. Yoshida
中科院分区：
文献类型：
--
作者：
M. Shinohara;M. Yamanaka;H. Daimon;E. Sakuma;H. Okumura;S. Misawa;K. Endo;S. Yoshida
首次在大尺寸（60×70 mm 2）Si衬底上获得了室温迁移率大于750 cm 2/（V ·s）、66 K附近迁移率大于3000 cm 2/（V ·s）的非掺杂3C-SiC外延层。获得这样的高迁移率外延层的条件进行了讨论，在外延层和它们的衬底尺寸依赖的电性能的分布。
Non-doped 3C-SiC epilayers having mobility higher than 750 cm2/(V ·s) at room temperature and 3000 cm2/(V ·s) around 66 K were obtained for the first time, using large size (60×70 mm2) Si substrates. The conditions for obtaining such high-mobility epilayers are discussed in terms of the distribution of the electrical properties over the epilayers and their substrate size dependence.