Boundary-Directed Epitaxy of Block Copolymers Toward Sub-10 nm Fabrication
Boundary-Directed Epitaxy of Block Copolymers Toward Sub-10 nm Fabrication
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面向亚 10 nm 制造的嵌段共聚物的边界定向外延
DOI：
10.1149/11101.0011ecst
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发表时间：
2023
期刊：
影响因子：
--
通讯作者：
Arnold, Michael Scott
中科院分区：
文献类型：
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作者：
Su, Katherine Anna;Jacobberger, Robert;Stan, Liliana;Arnold, Michael Scott
嵌段共聚物（BCP）的定向自组装（DSA）可用于生产纳米级图案，而无需最先进的光学光刻的成本和工艺复杂性。因此，DSA 可用于多种半导体应用，例如鳍式场效应晶体管和生物传感器。为了创建具有对齐的 BCP 域的技术上有用的图案，传统的 DSA 机制通常依赖于拓扑复杂的结构或高分辨率的化学图案来指导自组装，而这些结构很难制造。相比之下，新发现的 DSA 机制称为边界定向外延 (BDE)，它利用基板和相对较宽的化学条之间的边界处的化学对比。在这里，我们首次演示了使用 BDE 来模板化制造亚 10 nm 特征。 BDE 与选择性渗透结合使用，可创建超窄线空间氧化铝阵列。这些结果证明了 BDE 作为超高分辨率特征形成方法的概念验证。
The directed self-assembly (DSA) of block copolymers (BCPs) can be used to produce nanoscale patterns without the cost and process complexity of state-of-the-art optical lithography. Thus, DSA may be useful in a wide variety of semiconductor applications such as fin field-effect transistors and biosensors. To create technologically useful patterns with aligned BCP domains, conventional DSA mechanisms often rely on topographically complex structures or high-resolution chemical patterns to direct the self-assembly, that are difficult to fabricate. In comparison, a newly discovered mechanism for DSA, termed boundary-directed epitaxy (BDE), utilizes chemical contrast at the boundaries between a substrate and relatively wide chemical stripe. Here, we demonstrate the use of BDE to template the fabrication of sub-10 nm features for the first time. BDE is used in conjunction with selective infiltration to create ultranarrow line-space arrays of alumina. These results demonstrate a proof-of-concept for BDE as a method for ultrahigh-resolution feature formation.