Active GaAs MMIC band-pass filters with automatic frequency tuning and insertion loss control
Active GaAs MMIC band-pass filters with automatic frequency tuning and insertion loss control
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DOI：
10.1109/4.466077
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发表时间：
1995-10
期刊：
影响因子：
--
通讯作者：
V. Aparin;P. Katzin
中科院分区：
文献类型：
--
作者：
V. Aparin;P. Katzin
本文介绍了有源可调带通MMIC滤波器和匹配的MMIC控制电路的设计和测试性能，它们都是用标准的1/SPLµ/m GaAsMESFET铸造工艺制造的。控制电路采用双环主从控制方案，产生滤波器调频和Q控制偏置电压。独立的三段式滤波器覆盖1.5-2.0 GHz和1.96-2.64 GHz频段，带宽分别为86/SPL plusMN/6和126/SPL plusMN/1.0 MHz。在这些调谐范围内，控制电路自动将滤波器插入损耗保持在/SPL plusMN/0.5分贝以内，并在-50/SPL deg/C至+75/SPL deg/C>的温度范围内，将中心频率和插入损耗调节在优于/SPL plusMN/1.2 MHz和/SPL plusMN/0.3分贝的范围内；
This paper presents the design and measured performance of active tunable band-pass MMIC filters and matched MMIC control circuits, both fabricated using a standard 1-/spl mu/m GaAs MESFET foundry process. The control circuits generate filter frequency-tuning and Q-control bias voltages by using a dual-loop master-slave control scheme. Separate 3-section filters cover 1.5-2.0 and 1.96-2.64-GHz bands with 3-dB bandwidths of 86/spl plusmn/6 and 126/spl plusmn/1.0 MHz, respectively. The control circuits automatically maintain the filter insertion loss to within /spl plusmn/0.5 dB over these tuning ranges, and regulate the center frequency and insertion loss to within better than /spl plusmn/1.2 MHz and /spl plusmn/0.3 dB over a temperature range of -50/spl deg/C to +75/spl deg/C. >