Impact of cell distance and well-contact density on neutron-induced Multiple Cell Upsets
Impact of cell distance and well-contact density on neutron-induced Multiple Cell Upsets
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DOI：
10.1587/transele.e98.c.298
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发表时间：
2013-04
期刊：
影响因子：
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通讯作者：
J. Furuta;Kazutoshi Kobayashi;H. Onodera
中科院分区：
文献类型：
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作者：
J. Furuta;Kazutoshi Kobayashi;H. Onodera
我们测量了 65 nm 体 CMOS 工艺中触发器 (FF) 上中子引起的单粒子翻转 (SEU) 和多单元翻转 (MCU)。测量结果表明，MCU/SEU 高达 23.4%，并且随着 FF 上锁存器之间的距离呈指数下降。通过在 FF 之间插入接触良好的阵列可以大大降低 MCU 速率。通过在电源和接地轨下插入接触良好的阵列，MCU 的数量从 110 个减少到 1 个。
We measured neutron-induced Single Event Upsets (SEUs) and Multiple Cell Upsets (MCUs) on Flip-Flops (FFs) in a 65 nm bulk CMOS process. Measurement results show that MCU / SEU is up to 23.4% and is exponentially decreased by the distance between latches on FFs. MCU rates can drastically be reduced by inserting well-contact arrays between FFs. The number of MCUs is reduced from 110 to 1 by inserting a well-contact array under power and ground rails.