Generation of Electron Cyclotron Resonance Neutral Stream and Its Application to Si Etching
Generation of Electron Cyclotron Resonance Neutral Stream and Its Application to Si Etching
复制标题
电子回旋共振中性流的产生及其在硅刻蚀中的应用
DOI：
10.1143/jjap.33.2200
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发表时间：
1994
影响因子：
1.5
通讯作者：
Seitaro Matsuo Seitaro Matsuo
中科院分区：
文献类型：
--
作者：
T. Tsuchizawa;Yoshito Jin Yoshito Jin;Seitaro Matsuo Seitaro Matsuo
通过消除带电粒子，提取电子回旋共振(ECR)等离子体流中电荷交换反应产生的低能(10-20 eV)中性流，并将其用于硅腐蚀。基板上形成的尖点磁场消除了带电粒子，因为电子被磁场引导到基板之外。此外，残余离子被提供给衬底的正电压排斥，并且可以仅用中性流照射蚀刻样品。在Cl2和少量SF6的混合气体中，微波功率为400W时，硅的刻蚀速率约为100ä/min。我们证实，中性流刻蚀可以获得不失真的各向异性刻蚀形状，并可用于绘制精细图形。
A low-energy (10–20 eV) neutral stream generated by charge exchange reactions in an electron cyclotron resonance (ECR) plasma stream is extracted by eliminating charged particles and used for Si etching. The formation of a cusp magnetic field over the substrate eliminates charged particles because electrons are led outside the substrate by the magnetic field. In addition, residual ions are repelled by a positive voltage supplied to the substrate, and it becomes possible to irradiate the etching samples with only the neutral stream. The etch rate for Si is about 100 Å/min with a gaseous mixture of Cl2 and a small amount of SF6, and a microwave power of 400 W. We confirm that neutral stream etching allows us to attain anisotropic etching shapes without distortion, and that it can be used for delineating fine patterns.