Aging Mechanisms and Accelerated Lifetime Tests for SiC MOSFETs: An Overview
Aging Mechanisms and Accelerated Lifetime Tests for SiC MOSFETs: An Overview
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DOI：
10.1109/jestpe.2021.3110476
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发表时间：
2021-09
影响因子：
5.5
通讯作者：
S. Pu;Fei Yang;B. Vankayalapati;B. Akin
中科院分区：
文献类型：
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作者：
S. Pu;Fei Yang;B. Vankayalapati;B. Akin
加速寿命试验(ALT)在SiCMOSFET的长期可靠性研究中起着至关重要的作用，包括寿命估算、失效分析和状态监测。本文对最新的碳化硅MOSFET的ALTS电路、工作原理和诱发失效模式进行了全面的综述。首先，总结了器件芯片和封装中的薄弱环节和相应的老化机理。其次，根据系统的运行条件，讨论了ALT的配置和工作原理。具体地，对正常工作、第三象限导通和极端情况下的SiCMOSFET ALT进行了全面的描述和比较。针对不同的可靠性研究方向，综合论述了高空技术选择和发展的要求和未来发展趋势。最后，给出了合适的ALT、相应的失效位置和失效机理。本综述旨在提供关于碳化硅MOSFET可靠性测试选择、平台开发以及根据应用要求调整测试参数的见解。
Accelerated lifetime tests (ALTs) play a critical role in long-term reliability studies of SiC MOSFETs, including lifetime estimation, failure analysis, and condition monitoring. This article presents a comprehensive review of state-of-the-art ALTs circuits, operating principles, and induced failure modes for SiC MOSFETs. First, the weak spots and corresponding aging mechanisms in both device chip and package are summarized. Next, based on the system operating conditions, ALT configurations and working principles are discussed. Specifically, SiC MOSFET ALTs under normal operation, third-quadrant conduction, and extreme conditions are comprehensively described and compared. Requirements and future trends on ALTs selection and development are comprehensively discussed corresponding to various reliability research directions. Finally, suitable ALTs, corresponding failure locations, and mechanisms are tabulated as the conclusion. This review intends to provide insight on SiC MOSFET reliability test selection, platform development, and test parameter adjustments depending on application requirements.