Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution
Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution
复制标题
具有微米空间分辨率的 GaN 基半导体时间分辨光致发光光谱
DOI：
10.1016/s0022-2313(99)00594-3
复制
发表时间：
2000
期刊：
影响因子：
--
通讯作者：
S. Nakamura
中科院分区：
文献类型：
--
作者：
T. Izumi;Y. Narukawa;K. Okamoto;Y. Kawakami;S. Fujita;S. Nakamura
利用具有光谱分辨率和空间分辨率的光致发光光谱技术研究了GaN基薄膜的光致发光动力学。结果表明，横向外延生长GaN的PL寿命（τPL）主要受室温下非辐射复合过程的影响，在翼区（DD= 106 cm-2）测得的τ PL为86 ps，略大于窗区（DD= 108 cm-2）的τ PL值（70 ps）。这些表明，即使在这些DD能级下，穿透位错也几乎不限制发射效率，并且器件性能主要受其他类型的非辐射复合中心的限制。
Recombination dynamics in GaN-based layers have been studied by means of photoluminescence spectroscopy having spectral and spatial resolution. It was found that PL lifetime (τPL) of the epitaxially laterally overgrown GaN (ELO-GaN), which consists of the regions with high (window) and low (wing) threading dislocation density (DD), was dominated by the nonradiative recombination process at room temperature (RT), and that the τPLmeasured at wing region (DD=106cm−2) was 86ps which is slightly larger than the value (70ps) at window region (DD=108cm−2). These indicate that threading dislocations limit hardly the emission efficiency even with these DD-levels, and that the device performance is mainly limited by other types of nonradiative recombination centers.