Effect of Al inclusion in HfO2 on the physical and electrical properties of the dielectrics
Effect of Al inclusion in HfO2 on the physical and electrical properties of the dielectrics
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DOI：
10.1109/led.2002.805000
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发表时间：
2002-11-01
影响因子：
4.9
通讯作者：
Ma, TP
中科院分区：
文献类型：
--
作者：
Zhu, WJ;Tamagawa, T;Ma, TP
这封信介绍了铝夹杂物在HfO 2上的结晶温度，漏电流，带隙，介电常数，和边界陷阱的效果。已经发现，晶化温度显着增加，通过添加Al到HfO 2膜。添加31.7%的Al，晶化温度比没有Al的高约400 ℃-500 ℃。这种额外的Al也导致介电质的带隙从没有Al的HfO 2的5.8eV增加到具有45.5%的HfAlO的6.5eV Al和降低的介电常数从19.6的HfO 2没有Al到7.4的Al 2 O3没有Hf。综合考虑晶化温度、带隙和介电常数等因素，得出了常规自对准CMOS栅工艺的最佳Al浓度为30%左右的结论。
This letter presents the effect of Al inclusion in HfO2 on the crystallization temperature, leakage current, band gap, dielectric constant, and border traps. It has been found that the crystallization temperature is significantly increased by adding Al into the HfO2 film. With an addition of 31.7% Al, the crystallization temperature is about 400 degreesC-500 degreesC higher than that without Al. This additional Al also results an increase of the band gap of the dielectric from 5.8 eV for HfO2 without Al to 6.5 eV for HfAlO with 45.5% Al and a reduced dielectric constant from 19.6 for HfO2 without Al to 7.4 for Al2O3 without Hf. Considering the tradeoff among the crystallization temperature, band gap, and dielectric constant, we have concluded that the optimum Al concentration is about 30% for conventional self-aligned CMOS gate processing technology.