Solution Delivery of Cu ( hfac ) 2 for Alcohol‐Assisted Chemical Vapor Deposition of Copper
Solution Delivery of Cu ( hfac ) 2 for Alcohol‐Assisted Chemical Vapor Deposition of Copper
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用于铜的醇辅助化学气相沉积的 Cu ( hfac ) 2 溶液输送
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
A. Maverick
中科院分区：
文献类型：
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作者：
N. Borgharkar;G. Griffin;Hui Fan;A. Maverick
作者应用液体输送技术，使用Cu（hfac）{sub 2}在异丙醇[H（hfac）= 1，1，1，5，5，5-六氟-2，4-戊二酮]中的溶液进行铜的热活化化学气相沉积。使用300 ℃的衬底温度和1.8 Torr Cu（hfac）{sub 2}、12 Torr异丙醇和40 Torr H{sub 2}的反应物分压，作者获得了6.7 {±} 0.5 mg/cm·h（ca. 125 nm/min）。存在约5分钟的诱导时间，其与初始铜簇生长成彼此接触所需的时间（即，从扫描电子显微镜图像判断）。薄膜的折射率在2.5- 5.0 μ Ω cm的范围内（相对于块体Cu的1.68 μ Ω cm）。扫描电子显微镜图像表明这些高值是由簇之间的残余空隙体积引起的。通过从起始Cu（hfac）{sub 2}/异丙醇溶液中除去H{sub 2}O、通过湿法蚀刻衬底或通过增加衬底预处理时间可以提高生长速率和结晶率。
The authors have applied the liquid delivery technique for the thermally activated chemical vapor deposition of copper using a solution of Cu(hfac){sub 2} in isopropanol [H(hfac) = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione]. Using a substrate temperature of 300 C and reactant partial pressures of 1.8 Torr Cu(hfac){sub 2}, 12 Torr isopropanol, and 40 Torr H{sub 2}, the authors obtained a maximum growth rate of 6.7 {+-} 0.5 mg/cm h (ca. 125 nm/min). There is an induction time of about 5 min, which correlates with the time required for the initial copper clusters to grow into contact with each other (i.e., as judged from scanning electron microscope images). Film resistivities lie in the range 2.5--5.0 {micro}{Omega} cm (vs. 1.68 {micro}{Omega} cm for bulk Cu). The scanning electron microscope images suggest these high values are caused by residual void volume between the clusters. Growth rates and resistivities can be improved by eliminating H{sub 2}O from the starting Cu(hfac){sub 2}/isopropanol solution, by wet-etching the substrate or by increasing the substrate pretreatment time.