Monolithic integrated millimeter-wave IMPATT transmitter in standard CMOS technology
Monolithic integrated millimeter-wave IMPATT transmitter in standard CMOS technology
复制标题
采用标准 CMOS 技术的单片集成毫米波 IMPATT 发射器
DOI：
10.1109/tmtt.2005.858379
复制
发表时间：
2005
影响因子：
4.3
通讯作者：
Thomas H. Lee
中科院分区：
文献类型：
--
作者：
Talal Al;Thomas H. Lee
本文介绍了冲击雪崩渡越时间（IMPATT）二极管制造的0.18-/spl μ/m标准互补金属氧化物半导体技术，使工作在77 GHz。横向雪崩二极管集成了微带贴片天线，修改，以提供阻抗匹配和扩大调谐范围。天线的尺寸和阻抗匹配的设计使用高频电磁场求解器Sonnet。输出频谱没有可见的杂散分量。在76 GHz时发射功率为-62 dBm。实测频率在模拟值的1.3%以内。希望该器件能在汽车和通信系统中得到应用。
This paper describes impact avalanche transit time (IMPATT) diodes fabricated in 0.18-/spl mu/m standard complementary metal-oxide-semiconductor technology to enable operation at 77 GHz. The lateral IMPATT diodes are integrated with a microstrip patch antenna, modified to provide impedance matching and widen the tuning range. The antenna dimensions and the impedance matching are designed using the high-frequency electromagnetic field solver Sonnet. The output spectrum has no visible spurious components. The transmitted power is -62 dBm at 76 GHz. The measured frequency is within 1.3% of the simulated value. It is hoped that this device will find application in automotive and communication systems.