Low-temperature Preparation of Crystallized Zirconia Films by ECR Plasma MOCVD
Low-temperature Preparation of Crystallized Zirconia Films by ECR Plasma MOCVD
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ECR等离子体MOCVD低温制备结晶氧化锆薄膜
DOI：
10.1557/proc-0890-y08-27
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
T. Goto
中科院分区：
文献类型：
--
作者：
H. Masumoto;T. Goto
已知氧化锆具有优异的热稳定性和化学稳定性，以及氧化物离子传导性。因此，YSZ有望用作氧离子导电材料、光学镜面材料、催化材料和耐热材料。氧化锆薄膜已经通过PVD（ex.溅射和激光烧蚀）、化学气相沉积（CVD）和溶胶-凝胶法。化学气相沉积（CVD）可以制备出高质量的氧化锆薄膜，具有良好的共形覆盖率，但传统CVD的沉积温度通常高于PVD。另一方面，电子回旋共振（ECR）等离子体是高活性等离子体，并且通过使用ECR等离子体可以在低温下获得高质量的结晶膜。本文采用ECR等离子体MOCVD技术在石英、聚碳酸酯和聚酰亚胺等衬底上低温制备了氧化锆薄膜。锆-六氟乙酰丙酮溶液被用作前驱体。将置于玻璃鼓泡器中的源通过Ar气带入反应器中。微波（2.45GHz，500 W）通过矩形波导被引入离子室。磁场（875高斯）施加到离子室，以满足ECR条件。施加镜面型磁场（在衬底阶段为450高斯）以提高等离子体密度，这导致膜的沉积速率的增加。通过水冷保持器和红外线灯加热器将衬底温度（Ts）从30到700 ℃。微波功率从0变化到900 W。沉积时间为30至120分钟。在Ts=400 ℃以上得到立方、单斜和四斜氧化锆薄膜，在Ts= C以下得到立方和单斜氧化锆薄膜。立方和单斜氧化锆薄膜也得到在没有加热。从不加热到600 ℃，随着Ts的增加，沉积速率从10 nm/min增加到20 nm/min。在不加热的情况下，在聚碳酸酯和聚酰亚胺基底上获得了结晶氧化锆膜。ECR等离子体在低温下制备结晶氧化锆薄膜是非常有效的。
It is known that zirconia has excellent thermal and chemical stability, and oxide ion conduction. Therefore, YSZ is expected to be used as oxide ion conducting materials, optical mirror materials, catalytic materials and heat-resistant materials. Zirconia films have been fabricated by PVD (ex. sputtering and laser-ablation), chemical vapor deposition (CVD) and sol-gel methods. CVD is capable to prepare high quality zirconia films with excellent conformal coverage; however, deposition temperature of conventional CVD was usually high than PVD. On the other hand, an electron cyclotron resonance (ECR) plasma is high-activity plasma and high quality crystalline films can be obtained at low temperature by using ECR plasma. In the present study, zirconia thin films were prepared at low temperatures on quartz, polycarbonate and polyimide substrates by ECR plasma MOCVD. Zr-hexafluoroacetylacetonato solution was used as a precursor. The source, which was placed in a glass bubbler, was carried into a reactor by Ar gas. A microwave (2.45 GHz, 500 W) was introduced into the ion chamber through a rectangular wave guide. A magnetic field (875 Gauss) was applied to the ion chamber to satisfy the ECR condition. A mirror-type magnetic field (450 Gauss at the substrate stage) was applied in order to raise a plasma density, which results in an increase of the deposition rates of films. Substrate temperature (Ts) was from 30 to 700 C by water-cooling holder and infrared lamp heater. Microwave power was changed from 0 to 900 W. The deposition time was from 30 to 120 minutes. Cubic, monoclinic and tetragonal zirconia films were obtained over Ts=400 C, and cubic and monoclinic zirconia films were obtained below Ts= C. Cubic and monoclinic zirconia films were also obtained at no heating. The deposition rate increased from 10 to 20 nm/min with increasing Ts from no heating to 600 C. Crystallized zirconia films were obtained on polycarbonate and polyimide substrates at no heating. The ECR plasma was significantly effective to prepare crystallized zirconia films at low temperatures.
用于固体氧化物燃料电池应用的喷涂 GDC 薄膜
DOI：
--
发表时间：
2007
期刊：
影响因子：
--
作者：
Changsheng Ding;Hongfei Lin;Kazuhisa Sato and Toshiyuki Hashida;Yoshifumi Tsutai;Mabito Iguchi and Chiharu Wada
通讯作者：
Mabito Iguchi and Chiharu Wada