1.3 µm InGaAs/InAlGaAs Strained Quantum Well Lasers on InGaAs Ternary Substrates
1.3 µm InGaAs/InAlGaAs Strained Quantum Well Lasers on InGaAs Ternary Substrates
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InGaAs 三元衬底上的 1.3 µm InGaAs/InAlGaAs 应变量子阱激光器
DOI：
10.1143/jjap.38.l312
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发表时间：
1999
影响因子：
1.5
通讯作者：
H. Ishikawa
中科院分区：
文献类型：
--
作者：
K. Otsubo;Y. Nishijima;T. Uchida;H. Shoji;K. Nakajima;H. Ishikawa
在In0.31Ga0.69As三元衬底上首次实现了波长为1.3 μm的InGaAs/InAlGaAs应变量子阱激光器。对温度不敏感的斜率效率为-0.007 dB/K。在20°C和特征温度（T0）下的阈值电流密度（Jth）分别为677 A/cm 2和76 K。T0对每个阱的Jth的依赖性表明，通过在改善质量的InGaAs衬底上制造激光器，从而降低Jth，可以实现更高的T0。
InGaAs/InAlGaAs strained quantum well lasers with 1.3 µm wavelength have been realized on In0.31Ga0.69As ternary substrates for the first time, owing to the increased indium composition of the substrates. A temperature-insensitive slope efficiency of -0.007 dB/K has been observed. The threshold current density (Jth) at 20°C and characteristic temperature (T0) are 677 A/cm2 and 76 K, respectively. The dependence of T0 on Jth per well suggests that higher T0 would be achieved by fabricating the lasers on InGaAs substrates of improved quality, thereby decreasing Jth.
DOI：
10.1143/jjap.35.1273
发表时间：
1996-02-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
影响因子：
--
作者：
Kondow, M;Uomi, K;Yazawa, Y
通讯作者：
Yazawa, Y