The light-emitting semiconductor device
The light-emitting semiconductor device
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发光半导体器件
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
Алексей Владимирович Миронов
中科院分区：
文献类型：
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作者：
Юрий Георгиевич Шретер;Юрий Тоомасович Ребане;Алексей Владимирович Миронов
1.一种发光半导体器件，包括：- n导电型的第一半导体层，形成在所述衬底上; - p型导电性的第二半导体层; - 设置在第一层和第二层之间的有源层; - 设置在第二层上的导电层！- 第一接触沉积在衬底上！- 沉积在导电层上的第二接触，其中衬底包括至少一个以截顶倒金字塔形状形成的通孔，其中第一、第二有源层和导电层沉积在衬底的水平部分上和孔的内表面上。! 2.根据权利要求1所述的发光半导体器件，其中所述棱锥的所述面的数量在3和24之间，所述棱锥基部的边长在10微米至1 mm的范围内，所述棱锥的所述侧面相对于所述衬底表面的倾斜角在10 °至90 °的范围内。金字塔的高度从其全高的5%到50%被切断。! 3.根据权利要求1所述的发光半导体器件，其中所述通孔以二维晶格布置。! 4.根据权利要求1所述的发光半导体器件，其中，所述衬底厚度的范围为10微米至1 mm。5.根据权利要求1所述的发光半导体器件，其中所述衬底由氮化镓制成。! 6.根据权利要求1所述的发光半导体器件，其中所述衬底由碳化硅制成。! 7.根据权利要求1所述的发光半导体器件，其中所述衬底由氧化铝制成。! 8. SWE
1. A light-emitting semiconductor device comprising: - A substrate; ! - A first semiconductor layer of n-conductivity type formed on the substrate; ! - A second semiconductor layer of p-type conductivity; ! - An active layer disposed between the first and second layers; ! - A conductive layer disposed on the second layer! - A first contact deposited on the substrate! - A second contact deposited on the conductive layer, wherein the substrate comprises at least one through-hole formed in the shape of a truncated inverted pyramid, wherein the first, second, active and conductive layers are deposited both on the horizontal portion of the substrate and on the internal faces holes. ! 2. The light emitting semiconductor device of claim 1, wherein the amount of said faces of the pyramids is between 3 and 24, the side length of the pyramid base is in the range from 10 microns to 1 mm, the angle of inclination of said lateral faces of the pyramids with respect to the substrate surface ranges from 10 ° to 90 °, the height of the pyramid is severed from 5% to 50% of its full height. ! 3. The light emitting semiconductor device of claim 1, wherein the through holes are arranged in a two-dimensional lattice. ! 4. The light emitting semiconductor device of claim 1, wherein the substrate thickness ranges from 10 microns to 1 mm. ! 5. A light-emitting semiconductor device of claim 1, wherein the substrate is made of gallium nitride. ! 6. The light emitting semiconductor device of claim 1, wherein the substrate is made of silicon carbide. ! 7. A light-emitting semiconductor device of claim 1, wherein the substrate is made of alumina. ! 8. Swe