Correlation between Structural and Photoelectrochemical Properties of GaN Porous Nanostructures Formed by Photo-Assisted Electrochemical Etching
Correlation between Structural and Photoelectrochemical Properties of GaN Porous Nanostructures Formed by Photo-Assisted Electrochemical Etching
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DOI：
10.1149/2.1101410jes
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发表时间：
2014
影响因子：
3.9
通讯作者：
Y. Kumazaki;A. Watanabe;Zenji Yatabe;Taketomo Sato
中科院分区：
文献类型：
--
作者：
Y. Kumazaki;A. Watanabe;Zenji Yatabe;Taketomo Sato
标题 光辅助电化学蚀刻形成的 GaN 多孔纳米结构的结构与光电化学性质之间的相关性 作者：Kumazaki, Yusuke；渡边昭夫；矢田部、善治； Sato, Taketomo 引文 Journal of the Electrochemical Society, 161(10): H705-H709 发布日期 2014-08-06 文档 URL http://hdl.handle.net/2115/56975 版权 © The Electrochemical Society, Inc. 2014。保留所有权利。除美国版权法规定外，未经电化学会 (ECS) 明确许可，不得复制、转售、分发或修改本作品。这项工作的档案版本发表在 J. Electrochem 上。 Soc.，第 161 卷，第 10 期，第 H705-H709 页，2014 年。类型文章文件信息 J. Electrochem。 Soc.-2014-Kumazaki-H705-9.pdf
Title Correlation between Structural and Photoelectrochemical Properties of GaN Porous Nanostructures Formed by PhotoAssisted Electrochemical Etching Author(s) Kumazaki, Yusuke; Watanabe, Akio; Yatabe, Zenji; Sato, Taketomo Citation Journal of the Electrochemical Society, 161(10): H705-H709 Issue Date 2014-08-06 Doc URL http://hdl.handle.net/2115/56975 Rights © The Electrochemical Society, Inc. 2014. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in J. Electrochem. Soc., Volume 161, Issue 10, pp. H705-H709, 2014. Type article File Information J. Electrochem. Soc.-2014-Kumazaki-H705-9.pdf