Effect of Post-Treatments on Atomic Layer Deposition of TiN Thin Films Using Tetrakis(dimethylamido)titanium and Ammonia
Effect of Post-Treatments on Atomic Layer Deposition of TiN Thin Films Using Tetrakis(dimethylamido)titanium and Ammonia
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后处理对四(二甲基氨基)钛和氨原子层沉积 TiN 薄膜的影响
DOI：
10.1143/jjap.41.l418
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
Choon
中科院分区：
文献类型：
--
作者：
J. Yun;E. Choi;C. Jang;Choon
研究了在四(二甲胺基)钛(TDMAT)和氨气(NH3)中原子层沉积氮化钛(TiN)薄膜的性能，并与金属有机化学气相沉积(MOCVD)TiN薄膜进行了比较。基于沉积速率饱和与TDMAT脉冲时间的函数关系、薄膜厚度与循环次数的线性关系以及理想的阶跃覆盖，证实了TDMAT和NH3的ALD工艺是成功的。对于AlD TiN薄膜，观察到了老化效应，并通过RTN去除了薄膜中的碳。此外，通过等离子体处理，实现了碳、氧的去除和表面氮化，从而防止了老化效应，降低了电阻率，并具有轻微的结晶度。在700℃的衬底温度下，经RTN处理的AlD TiN薄膜表面出现了裂纹和空洞，而MOCVD TiN薄膜则没有。
The atomic layer deposition (ALD) of titanium nitride (TiN) thin films from tetrakis(dimethylamido)titanium (TDMAT) and ammonia (NH3) has been investigated, and the properties of ALD TiN films with and without post-treatments such as rapid thermal nitridation (RTN) and H2/N2 plasma treatment were evaluated and compared with those of metal organic chemical vapor deposition (MOCVD) TiN with and without RTN. Based on the saturation of the deposition rate as a function of TDMAT pulse time, the linear relationship between film thickness and the number of cycles, and the perfect step coverage, the success of the ALD process for TDMAT and NH3 was confirmed. For the ALD TiN film, an aging effect was observed and the carbon in the film was removed by RTN. Also, by plasma treatment, carbon and oxygen removal and surface nitridation were accomplished leading to the prevention of the aging effect, lower resistivity, and slight crystallinity. The cracks and voids were found on the ALD TiN film surface treated by RTN at 700°C substrate temperature, however, they were not found for MOCVD TiN film.