Freely-migrating-defect production during irradiation at elevated temperatures.
Freely-migrating-defect production during irradiation at elevated temperatures.
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高温照射过程中自由迁移缺陷的产生。
DOI：
10.1103/physrevb.38.12868
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发表时间：
1988
期刊：
影响因子：
--
通讯作者：
Okamoto
中科院分区：
文献类型：
--
作者：
Hashimoto;Rehn;Okamoto
使用原位卢瑟福背散射光谱法研究了 Cu-lat.% Au 合金中辐射引起的偏析。在 350/℃/C 下用四种质量基本不同的离子照射期间，测量了近表面区域中 Au 原子消耗量作为剂量的函数。通过确定给出类似辐射诱导偏析率的束流密度，评估了 1.8 MeV /sup 1/H、/sup 4/He、/sup 20/Ne 和 /sup 84/Kr 离子产生自由迁移缺陷的相对效率。与中值能量为 0.83 keV 的辐照相比，初级碰撞原子中值能量为 1.7、13 和 79 keV 的辐照分别产生了 53、7 和 6% 的相对效率。尽管缺陷和主体合金特性截然不同，但在 Cu-Au 中确定的产生自由迁移缺陷的相对效率与之前在 Ni-Si 合金中发现的结果非常相似。因此，所报告的效率似乎为对各种辐照粒子在不同合金系统中引起的微观结构变化进行定量相关性提供了可靠的基础。 27 条参考文献、9 张图、3 个标签。
Radiation-induced segregation in a Cu-lat.% Au alloy was investigated using in situ Rutherford Backscattering Spectrometry. The amount of Au atom depletion in the near surface region was measured as a function of dose during irradiation at 350/degree/C with four ions of substantially different masses. Relative efficiencies for producing freely-migrating defects were evaluated for 1.8 MeV /sup 1/H, /sup 4/He, /sup 20/Ne and /sup 84/Kr ions by determining beam current densities that gave similar radiation-induced segregation rates. Irradiations with primary knock-on atom median energies of 1.7, 13 and 79 keV yielded relative efficiencies of 53, 7 and 6%, respectively, compared to the irradiation with a 0.83 keV median energy. Despite quite different defect and host alloy properties, the relative efficiencies for producing freely-migrating defects determined in Cu-Au are remarkably similar to those found previously in Ni-Si alloys. Hence, the reported efficiencies appear to offer a reliable basis for making quantitative correlations of microstructural changes induced in different alloy systems by a wide variety of irradiation particles. 27 refs., 9 figs., 3 tabs.