Optical bandgap energy of wurtzite InN
Optical bandgap energy of wurtzite InN
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DOI：
10.1063/1.1499753
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发表时间：
2002-08-12
影响因子：
4
通讯作者：
Kurimoto, E
中科院分区：
文献类型：
--
作者：
Matsuoka, T;Okamoto, H;Kurimoto, E
采用金属有机气相外延技术在GaN厚层上生长了纤锌矿InN薄膜。拉曼散射、X射线衍射和反射高能电子衍射证实了(0001)取向单晶层的生长。我们在室温下观察到在0.76 eV处有很强的光致发光，在0.7-1.0 eV处有一个清晰的吸收边。相反，即使在类似于1.9 eV的高功率激发下，也没有观察到光致发光，这被报道为多晶膜吸收实验中的带隙。仔细观察表明，纤锌矿InN单晶的真正禁带宽度为0.7-1.0 eV，这一差异可以归因于结晶度的不同。(C)2002年美国物理研究所。
Wurtzite InN films were grown on a thick GaN layer by metalorganic vapor phase epitaxy. Growth of a (0001)-oriented single crystalline layer was confirmed by Raman scattering, x-ray diffraction, and reflection high energy electron diffraction. We observed at room temperature strong photoluminescence (PL) at 0.76 eV as well as a clear absorption edge at 0.7-1.0 eV. In contrast, no PL was observed, even by high power excitation, at similar to1.9 eV, which had been reported as the band gap in absorption experiments on polycrystalline films. Careful inspection strongly suggests that a wurtzite InN single crystal has a true bandgap of 0.7-1.0 eV, and the discrepancy could be attributed to the difference in crystallinity. (C) 2002 American Institute of Physics.