Investigation of Al-PMA Effect on Al2O3/GeOX/Ge Gate Stack
Investigation of Al-PMA Effect on Al2O3/GeOX/Ge Gate Stack
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Al-PMA 对 Al2O3/GeOX/Ge 栅叠层效应的研究
DOI：
10.1149/06406.0261ecst
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
H. Nakashima
中科院分区：
文献类型：
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作者：
Y. Nagatomi;Y. Nagaoka;K. Yamamoto;D. Wang;H. Nakashima
研究了Al金属化后退火（PMA）对Al_2O_3/GeOX/Ge栅叠层的影响。Al-PMA对Al 2 O3/GeOx/Ge栅堆叠有效，类似于SiO2/GeO 2栅堆叠的情况。结果表明，Al-PMA在400 ℃时可以降低带隙下半区的界面态密度和慢陷阱密度。然而，在使用具有Al-PMA的栅堆叠制造的金属源/漏（S/D）MOSFET中出现了严重的问题，即栅与S/D之间的电隔离不良。结果表明，Al-PMA在400 ℃时会引起Al与S/D侧壁上的Al_2O_3膜发生反应，导致Al_2O_3膜的绝缘性能下降。为了解决这个问题，我们展示了一种用于在S/D侧壁上沉积薄SiO2膜的方法。
We investigated the Al post metallization annealing (PMA) effect on Al2O3/GeOX/Ge gate stacks. The Al-PMA is effective for Al2O3/GeOX/Ge gate stacks, similar to the case of SiO2/GeO2 gate stack. It was found that interface states density in the lower half of the band gap and slow trap density can be reduced by Al-PMA at 400 C. However, a serious problem occurred in the metal source/drain (S/D) MOSFET fabricated using the gate stack with Al-PMA, which was poor electrical isolation between gate and S/D. It was found that Al-PMA at 400 C caused the reaction of Al with Al2O3 film on the S/D side wall, resulting in a decrease in insulating quality of Al2O3 film. To solve this problem, we demonstrated a method for depositing a thin SiO2 film on the S/D side wall.