Electrical Properties of (110)-Oriented Nondoped Mg2Si Films with p-Type Conduction Prepared by RF Magnetron Sputtering Method
Electrical Properties of (110)-Oriented Nondoped Mg2Si Films with p-Type Conduction Prepared by RF Magnetron Sputtering Method
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DOI：
10.1007/s11664-014-3040-6
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发表时间：
2014-02
影响因子：
2.1
通讯作者：
Shota Ogawa;Atsuo Katagiri;Takao Shimizu;M. Matsushima;K. Akiyama;Y. Kimura;H. Uchida;H. Funakubo
中科院分区：
文献类型：
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作者：
Shota Ogawa;Atsuo Katagiri;Takao Shimizu;M. Matsushima;K. Akiyama;Y. Kimura;H. Uchida;H. Funakubo
采用射频磁控溅射技术在(001)蓝宝石衬底上制备了(110)取向的硅化镁(Mg2Si)厚膜。在10mTorr~140mTorr，300°C真空度范围内，获得了Si/(Mg+Si)=0.33的化学计量比的Mg_2Si薄膜。在500℃热处理后，薄膜的离面晶格参数向低值移动，电导率提高了两个数量级。室温下的塞贝克系数为517μV K−1，随温度的升高而减小；在500℃时，塞贝克系数保持在一个恒定的正值212μV K−1，这可能与在此温度范围内发生p型导电的可能性有关。
Magnesium silicide (Mg2Si) thick films with (110) orientation were fabricated on (001) sapphire substrate using radiofrequency magnetron sputtering. Stoichiometric Mg2Si films with composition Si/(Mg + Si) = 0.33 were achieved over a range of vacuum from 10 mTorr to 140 mTorr and 300°C. On postannealing the film at 500°C, the out-of-plane lattice parameter shifted to lower values and the electrical conductivity increased by two orders of magnitude. A room-temperature Seebeck coefficient of 517μV K−1was observed and found to decrease with increasing temperature; the Seebeck coefficient remained at a constant positive value of 212μV K−1at 500°C. This can be related to the possibility ofp-type conduction in this temperature range.