Nonlinear optical properties of photoresists for projection lithography
Nonlinear optical properties of photoresists for projection lithography
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DOI：
10.1063/1.116411
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发表时间：
1996-01-22
影响因子：
4
通讯作者：
Yariv, A
中科院分区：
文献类型：
--
作者：
Kewitsch, AS;Yariv, A
在引发光致抗蚀剂中的交联时，光束自聚焦和自陷。这种非线性光学现象仅在低平均光强时才明显，并产生大至0.04的折射率变化。提出利用投影光刻中的自聚焦和自陷现象来提高分辨率和焦深。(C)1996年美国物理学会。
Optical beams are self-focused and self-trapped upon initiating crosslinking in photoresists. This nonlinear optical phenomenon is apparent only for low average optical intensities and produces index of refraction changes as large as 0.04. We propose using the self-focusing and self-trapping phenomenon in projection photolithography to enhance the resolution and depth of focus. (C) 1996 American Institute of Physics.