Ambipolar light-emitting organic field-effect transistor
Ambipolar light-emitting organic field-effect transistor
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DOI：
10.1063/1.1785290
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发表时间：
2004-08-30
影响因子：
4
通讯作者：
Muccini, M
中科院分区：
文献类型：
--
作者：
Rost, C;Karg, S;Muccini, M
我们展示了一个发光的有机场效应晶体管（OFET）具有明显的双极性电流特性。双极传输层是作为空穴传输材料的α-五硫代噻吩（α-5 T）和作为电子传输材料的N，N-′-双十三烷基二萘嵌苯-3，4，9，10-四羧酸二酰亚胺（P13）的共蒸发薄膜。光强度由漏极-源极电压V-DS和栅极电压V-G两者控制。此外，后者可用于调节电荷载流子平衡。该器件结构作为一个模型系统的双极发光OFFERS和演示的一般概念，通过共蒸发两种不同的有机半导体调整电子和空穴迁移率。(C)2004年，美国物理学会。
We demonstrate a light-emitting organic field-effect transistor (OFET) with pronounced ambipolar current characteristics. The ambipolar transport layer is a coevaporated thin film of alpha-quinquethiophene (alpha-5T) as hole-transport material and N,N-'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) as electron-transport material. The light intensity is controlled by both the drain-source voltage V-DS and the gate voltage V-G. Moreover, the latter can be used to adjust the charge-carrier balance. The device structure serves as a model system for ambipolar light-emitting OFETs and demonstrates the general concept of adjusting electron and hole mobilities by coevaporation of two different organic semiconductors. (C) 2004 American Institute of Physics.