Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness
Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness
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DOI：
10.1063/1.2805197
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发表时间：
2007-10-29
影响因子：
4
通讯作者：
Lai, Y.-H.
中科院分区：
文献类型：
--
作者：
Li, Y.-L.;Huang, R.;Lai, Y.-H.
制备了不同InGaN量子阱厚度的InGaN/GaN多量子阱（MQW）发光二极管并进行了表征。对发光效率与电流密度的关系的研究揭示了各种效率下降行为。研究发现，量子阱结构的量子阱厚度可以显著降低效率下降。另一方面，相对内量子效率（IQE）的测量表明，由于电子和空穴分布函数的更大的空间重叠，更薄的阱导致更高的IQE。(C)2007年，美国物理学会。
InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes with varied InGaN quantum well thicknesses are fabricated and characterized. The investigation of luminous efficiency versus current density reveals a variety of efficiency droop behaviors. It is found that the efficiency droop can be drastically reduced by increasing the quantum well thickness of the MQW structures. On the other hand, relative internal quantum efficiency (IQE) measurements indicate that a thinner well results to higher IQEs owing to the greater spatial overlap of electron and hole distribution functions. (C) 2007 American Institute of Physics.